Development of 230-270 nm AlGaN-Based Deep UV LEDs
نویسندگان
چکیده
منابع مشابه
Growth and optical properties of III-nitride semiconductors for deep UV (230–350 nm) light-emitting diodes (LEDs) and laser diodes (LDs)
For the first time, we demonstrated intense ultraviolet (UV) emission at 230–350 nm from III-nitride compound semiconductors grown by metalorganic vapor phase epitaxy (MOVPE). First, we obtained 230 nm-band intense UV emission from AlN/AlxGa1−xN quantum wells (QWs) at 77K. The emission efficiency of AlGaN-based QWs was as high as that of blue light-emitting diodes (LEDs) at low temperature, how...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 2008
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss.128.748